PART |
Description |
Maker |
NAND256-A NAND01G-A NAND01GW3A2AZB1 NAND01GW3A0AZB |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位千兆位(x8/x1628 Byte/264字的页面.8V/3V,NAND闪存芯片 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位1千兆位(x8/x1628 Byte/264字的页面1.8V/3V,NAND闪存芯片 128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 8M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 64M X 8 FLASH 3V PROM, 35 ns, PBGA55 64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 128M X 8 FLASH 3V PROM, 35 ns, PDSO48 8M X 16 FLASH 3V PROM, 35 ns, PDSO48 32M X 16 FLASH 3V PROM, 35 ns, PDSO48 32M X 16 FLASH 3V PROM, 35 ns, PBGA55
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ST Microelectronics 意法半导 STMicroelectronics N.V. NUMONYX http://
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HY27SG082G2M-TCB HY27UG162G2M-TCB HY27SG162G2M-SEP |
256M X 8 FLASH 1.8V PROM, 30 ns, PDSO48 128M X 16 FLASH 3.3V PROM, 30 ns, PDSO48 128M X 16 FLASH 1.8V PROM, 30 ns, PDSO48
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HYNIX SEMICONDUCTOR INC
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HY27UF162G2M-TPEB HY27UF162G2M-TPCS HY27UF162G2M-T |
128M X 16 FLASH 3.3V PROM, 30 ns, PDSO48
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HYNIX SEMICONDUCTOR INC
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LH28F008SCHB-LF12 LH28F008SCT-LF12 LH28F008SCR-LF8 |
1M X 8 FLASH 2.7V PROM, 120 ns, PBGA42 FBGA-42 1M X 8 FLASH 2.7V PROM, 120 ns, PDSO40 TSOP1-40 1M X 8 FLASH 2.7V PROM, 85 ns, PDSO40 REVERSE, TSOP1-40 1M X 8 FLASH 2.7V PROM, 120 ns, PDSO40 REVERSE, TSOP1-40 1M X 8 FLASH 2.7V PROM, 85 ns, PBGA42 FBGA-42 1M X 8 FLASH 2.7V PROM, 85 ns, PDSO44 SOP-44 1M X 8 FLASH 2.7V PROM, 85 ns, PDSO40 TSOP1-40 1M X 8 FLASH 2.7V PROM, 120 ns, PDSO44 SOP-44 1M X 8 FLASH 5V PROM, 120 ns, PDSO56 512K X 8 FLASH 5V PROM, 60 ns, PDSO44 2M X 8 FLASH 5V PROM, 120 ns, PDSO56 512K X 8 FLASH 5V PROM, 60 ns, PDSO48 256K X 8 FLASH 5V PROM, 80 ns, PDSO32
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Sharp Electronics, Corp. SHARP ELECTRONICS CORP
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SST39VF010-90-4C-B3KE SST39VF040-90-4C-WHE SST39VF |
128K X 8 FLASH 2.7V PROM, 90 ns, PBGA48 512K X 8 FLASH 2.7V PROM, 90 ns, PDSO32 512K X 8 FLASH 2.7V PROM, 90 ns, PQCC32 64K X 8 FLASH 2.7V PROM, 90 ns, PDSO32 256K X 8 FLASH 2.7V PROM, 90 ns, PDSO32
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SILICON STORAGE TECHNOLOGY INC
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AM29DL16XC AM29DL164CB80WCI AM29DL164CB120WCE AM29 |
Am29DL16xC - 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only. Simultaneous Operation Flash Memory Am29DL16xC - 16兆位米8 1个M x 16位).0伏的CMOS只。同时作业闪 2M X 8 FLASH 3V PROM, 80 ns, PBGA48 2M X 8 FLASH 3V PROM, 120 ns, PBGA48 2M X 8 FLASH 3V PROM, 90 ns, PBGA48
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AMIC Technology, Corp. ADVANCED MICRO DEVICES INC
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S29GL064A11TFIR20 S29GL064A11TFIR22 S29GL016A10FAI |
4M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 1M X 16 FLASH 3V PROM, 100 ns, PBGA64 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 100 ns, PDSO56 2M X 16 FLASH 3V PROM, 100 ns, PBGA56 4M X 16 FLASH 3V PROM, 90 ns, PBGA64 Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:48-TSOP; Memory Configuration:64K x 16; Memory Size:64MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes 4M X 16 FLASH 3V PROM, 90 ns, PDSO48 4M X 16 FLASH 3V PROM, 100 ns, PDSO48
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Spansion, Inc. SPANSION LLC
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S29JL032H60TFI310 S29JL032H90TFI310 S29JL032H70TAI |
JT 3C 3#16 SKT PLUG 2M X 16 FLASH 3V PROM, 90 ns, PDSO48 JT 37C 37#22D PIN WALL RECP 2M X 16 FLASH 3V PROM, 70 ns, PDSO48 32M BIT CMOS 3.0V FLASH MEMORY 32兆位CMOS 3.0V闪存 32M BIT CMOS 3.0V FLASH MEMORY 2M X 16 FLASH 3V PROM, 60 ns, PDSO48 32M BIT CMOS 3.0V FLASH MEMORY 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
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Spansion Inc. Advanced Micro Devices, Inc. Spansion, Inc. http://
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SST39VF3201B-70-4C-B3KE SST39VF3202B-70-4I-B3KE-T |
2M X 16 FLASH 2.7V PROM, 70 ns, PTSO48 2M X 16 FLASH 2.7V PROM, 70 ns, PBGA48 32 Mbit (x16) Multi-Purpose Flash Plus
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Microchip Technology Inc. SILICON STORAGE TECHNOLOGY INC
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HY27US08561A HY27US16561A HY27SS08561A HY27SS16561 |
256Mbit (32Mx8bit / 16Mx16bit) NAND Flash 32M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, LEAD FREE, FBGA-63 32M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48 32M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, FBGA-63 32M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, LEAD FREE, USOP1-48 32M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48 16M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48 32M X 8 FLASH 3.3V PROM, 30 ns, PBGA63 16M X 16 FLASH 1.8V PROM, 35 ns, PBGA63
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Hynix Semiconductor, Inc. HYNIX SEMICONDUCTOR INC
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MB84SF6H6H6L2-70 MB84SF6H6H6L2-70PBS |
3 Stacked MCP (Multi-Chip Package) FLASH & FLASH & FCRAM 128M (X16) Burst FLASH MEMORY & 128M (X16) Page/Burst Mobile FCRAM
|
Spansion Inc.
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AT49F002N-90JC AT49F002NT-70JL AT49F002NT-90JL AT4 |
256K X 8 FLASH 5V PROM, 70 ns, PQCC32 PLASTIC, MS-016AE, LCC-32 256K X 8 FLASH 5V PROM, 90 ns, PQCC32 PLASTIC, MS-016AE, LCC-32 256K X 8 FLASH 5V PROM, 120 ns, PQCC32 PLASTIC, MS-016AE, LCC-32 256K X 8 FLASH 5V PROM, 55 ns, PQCC32 PLASTIC, MS-016AE, LCC-32 550NS,PDIP,IND TEMP,5.0V(FLASH) 256K X 8 FLASH 5V PROM, 55 ns, PDIP32 256K X 8 FLASH 5V PROM, 55 ns, PDSO32
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聚兴科技股份有限公司 Atmel, Corp. ATMEL CORP
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